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SELECTIVE-AREA GROWTH OF III-V...
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SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS
Xehetasun bibliografikoak
Egile Nagusiak:
Davies, G
,
Skevington, P
,
Foord, J
,
French, C
,
Levoguer, C
Formatua:
Conference item
Argitaratua:
1994
Aleari buruzko argibideak
Deskribapena
Antzeko izenburuak
MARC erregistroa
Deskribapena
Gaia:
Antzeko izenburuak
REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
nork: Foord, J, et al.
Argitaratua: (1993)
SURFACE-REACTION MECHANISMS GOVERNING THE SELECTIVE AREA GROWTH OF III-V COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
nork: Davies, G, et al.
Argitaratua: (1993)
REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
nork: Foord, J, et al.
Argitaratua: (1993)
SELECTIVE AREA GROWTH OF III-V-COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
nork: Davies, G, et al.
Argitaratua: (1992)
SOME COMPARISONS OF CHEMICAL BEAM EPITAXY WITH GAS SOURCE MOLECULAR-BEAM EPITAXY
nork: Davies, G, et al.
Argitaratua: (1991)