SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS
Autors principals: | Davies, G, Skevington, P, Foord, J, French, C, Levoguer, C |
---|---|
Format: | Conference item |
Publicat: |
1994
|
Ítems similars
-
REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
per: Foord, J, et al.
Publicat: (1993) -
SURFACE-REACTION MECHANISMS GOVERNING THE SELECTIVE AREA GROWTH OF III-V COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
per: Davies, G, et al.
Publicat: (1993) -
REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
per: Foord, J, et al.
Publicat: (1993) -
SELECTIVE AREA GROWTH OF III-V-COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
per: Davies, G, et al.
Publicat: (1992) -
SOME COMPARISONS OF CHEMICAL BEAM EPITAXY WITH GAS SOURCE MOLECULAR-BEAM EPITAXY
per: Davies, G, et al.
Publicat: (1991)