SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS

SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS

Bibliografiske detaljer
Main Authors:	Davies, G, Skevington, P, Foord, J, French, C, Levoguer, C
Format:	Conference item
Udgivet:	1994

Lignende værker

REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
af: Foord, J, et al.
Udgivet: (1993)

SURFACE-REACTION MECHANISMS GOVERNING THE SELECTIVE AREA GROWTH OF III-V COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
af: Davies, G, et al.
Udgivet: (1993)

REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
af: Foord, J, et al.
Udgivet: (1993)

SELECTIVE AREA GROWTH OF III-V-COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
af: Davies, G, et al.
Udgivet: (1992)

SOME COMPARISONS OF CHEMICAL BEAM EPITAXY WITH GAS SOURCE MOLECULAR-BEAM EPITAXY
af: Davies, G, et al.
Udgivet: (1991)

An investigation of ZnSe growth by chemical beam epitaxy using modulated beam scattering and related techniques
af: Foord, J, et al.
Udgivet: (1996)

SOME COMPARISONS OF CHEMICAL BEAM EPITAXY INGAAS/INP GROWTH USING TRIETHYLGALLIUM, TRIISOPROPYLGALLIUM AND TRIISOBUTYLGALLIUM SOURCES
af: Davies, G, et al.
Udgivet: (1994)

SURFACE-REACTION MECHANISMS IN CHEMICAL BEAM EPITAXY
af: Foord, J, et al.
Udgivet: (1991)

MODULATED MOLECULAR-BEAM MASS-SPECTROMETRY STUDIES OF THE GROWTH OF GAAS AND INXGA1-XAS USING TRI-ISOBUTYLGALLIUM
af: Levoguer, C, et al.
Udgivet: (1994)

Chemical Beam Epitaxy of Compound Semiconductors
af: Kolodziejski, Leslie A., et al.
Udgivet: (2010)

Chemical Beam Epitaxy of Compound Semiconductors
af: Kolodziejski, Leslie A., et al.
Udgivet: (2010)

Chemical Beam Epitaxy of Compound Semiconductors
af: Kolodziejski, Leslie A., et al.
Udgivet: (2010)

Chemical Beam Epitaxy of Compound Semiconductors
af: Kolodziejski, Leslie A., et al.
Udgivet: (2010)

Chemical Beam Epitaxy of Compound Semiconductors
af: Kolodziejski, Leslie A., et al.
Udgivet: (2010)

SELECTIVE AREA GROWTH FOR OPTOELECTRONIC INTEGRATED-CIRCUITS (OEICS)
af: Davies, G, et al.
Udgivet: (1991)

Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
af: Bin Wang, et al.
Udgivet: (2022-07-01)

DEVELOPMENT OF CHEMICAL BEAM EPITAXY FOR THE DEPOSITION OF GALLIUM NITRIDE
af: Kingsley, C, et al.
Udgivet: (1995)

Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
af: Gao, Q, et al.
Udgivet: (2009)

CHEMICAL BEAM EPITAXY AND RELATED GROWTH TECHNIQUES 1991 - PROCEEDINGS OF THE 3RD INTERNATIONAL-CONFERENCE ON CHEMICAL BEAM EPITAXY AND RELATED GROWTH TECHNIQUES OXFORD, UK, 1-5 SEPTEMBER 1991 - PREFACE
af: Davies, G, et al.
Udgivet: (1992)

Reactivity patterns of stibine and trisdimethylaminoantimony precursors for chemical beam epitaxial growth and etching
af: Foord, J, et al.
Udgivet: (1998)

Growth and mechanistic studies of diamond formation by chemical beam epitaxy using methyl and acetylene precursors
af: Foord, J, et al.
Udgivet: (1996)

Multilayer Epitaxial Heterostructures with Multi-Component III–V:Fe Magnetic Semiconductors
af: Alexey V. Kudrin, et al.
Udgivet: (2023-08-01)

Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates
af: Eric Tournié, et al.
Udgivet: (2022-06-01)

Gas Source Molecular Beam Epitaxy of Compound Semiconductors
af: Kolodziejski, Leslie A., et al.
Udgivet: (2010)

Gas Source Molecular Beam Epitaxy of Compound Semiconductors
af: Kolodziejski, Leslie A., et al.
Udgivet: (2010)

Gas Source Molecular Beam Epitaxy of Compound Semiconductors
af: Kolodziejski, Leslie A., et al.
Udgivet: (2010)

Characterisation of compound semiconductors grown by molecular beam epitaxy
af: Zhang, Peng Hua
Udgivet: (2009)

Molecular beam epitaxial growth of semiconductor heterostructures for THz electronics
af: Ustinov Victor M.
Udgivet: (2018-01-01)

Recent advances in the Van der Waals epitaxy growth of III‐V semiconductor nanowires on graphene
af: Ezekiel Anyebe Anyebe, et al.
Udgivet: (2021-04-01)

The effect of V : III ratio on the growth of InN nanostructures by molecular beam epitaxy
af: Oliver, R, et al.
Udgivet: (2003)

SURFACE CHEMICAL PROCESSES IN METAL ORGANIC MOLECULAR-BEAM EPITAXY - GA DEPOSITION FROM TRIETHYLGALLIUM ON GAAS(100)
af: Murrell, A, et al.
Udgivet: (1990)

Molecular beam epitaxy of Cd3As2 on a III-V substrate
af: Timo Schumann, et al.
Udgivet: (2016-12-01)

Photoluminescence studies of compound semiconductor structures grown by molecular beam epitaxy
af: Li, He Ming.
Udgivet: (2009)

Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy
af: Patriarche Gilles, et al.
Udgivet: (2011-01-01)

In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors
af: Henning Fouckhardt, et al.
Udgivet: (2023-01-01)

GROWTH AND MBMS STUDIES OF REACTION-MECHANISMS FOR INXGA1-XAS CBE
af: Singh, N, et al.
Udgivet: (1992)

HREELS STUDIES OF C2H4 ADSORPTION ON III-V SEMICONDUCTOR SURFACES
af: Fitzgerald, E, et al.
Udgivet: (1991)

Engineering III-V nanowires for optoelectronics: from epitaxy to terahertz photonics
af: Joyce, HJ, et al.
Udgivet: (2018)

Wet-chemical synthesis and applications of semiconductor nanomaterial-based epitaxial heterostructures
af: Chen, Junze, et al.
Udgivet: (2020)

Wet-Chemical Synthesis and Applications of Semiconductor Nanomaterial-Based Epitaxial Heterostructures
af: Junze Chen, et al.
Udgivet: (2019-10-01)