SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS
Príomhchruthaitheoirí: | Davies, G, Skevington, P, Foord, J, French, C, Levoguer, C |
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Formáid: | Conference item |
Foilsithe / Cruthaithe: |
1994
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Míreanna comhchosúla
Míreanna comhchosúla
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REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
de réir: Foord, J, et al.
Foilsithe / Cruthaithe: (1993) -
SURFACE-REACTION MECHANISMS GOVERNING THE SELECTIVE AREA GROWTH OF III-V COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
de réir: Davies, G, et al.
Foilsithe / Cruthaithe: (1993) -
REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
de réir: Foord, J, et al.
Foilsithe / Cruthaithe: (1993) -
SELECTIVE AREA GROWTH OF III-V-COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
de réir: Davies, G, et al.
Foilsithe / Cruthaithe: (1992) -
SOME COMPARISONS OF CHEMICAL BEAM EPITAXY WITH GAS SOURCE MOLECULAR-BEAM EPITAXY
de réir: Davies, G, et al.
Foilsithe / Cruthaithe: (1991)