SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS

SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS

Bibliografski detalji
Glavni autori:	Davies, G, Skevington, P, Foord, J, French, C, Levoguer, C
Format:	Conference item
Izdano:	1994

Slični predmeti

REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
od: Foord, J, i dr.
Izdano: (1993)

SURFACE-REACTION MECHANISMS GOVERNING THE SELECTIVE AREA GROWTH OF III-V COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
od: Davies, G, i dr.
Izdano: (1993)

REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
od: Foord, J, i dr.
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SELECTIVE AREA GROWTH OF III-V-COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
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SOME COMPARISONS OF CHEMICAL BEAM EPITAXY WITH GAS SOURCE MOLECULAR-BEAM EPITAXY
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SOME COMPARISONS OF CHEMICAL BEAM EPITAXY INGAAS/INP GROWTH USING TRIETHYLGALLIUM, TRIISOPROPYLGALLIUM AND TRIISOBUTYLGALLIUM SOURCES
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SURFACE-REACTION MECHANISMS IN CHEMICAL BEAM EPITAXY
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MODULATED MOLECULAR-BEAM MASS-SPECTROMETRY STUDIES OF THE GROWTH OF GAAS AND INXGA1-XAS USING TRI-ISOBUTYLGALLIUM
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Chemical Beam Epitaxy of Compound Semiconductors
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Chemical Beam Epitaxy of Compound Semiconductors
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Chemical Beam Epitaxy of Compound Semiconductors
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SELECTIVE AREA GROWTH FOR OPTOELECTRONIC INTEGRATED-CIRCUITS (OEICS)
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Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
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