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SELECTIVE-AREA GROWTH OF III-V...
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Stalna poveznica
SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS
Bibliografski detalji
Glavni autori:
Davies, G
,
Skevington, P
,
Foord, J
,
French, C
,
Levoguer, C
Format:
Conference item
Izdano:
1994
Primjerci
Opis
Slični predmeti
Prikaz za djelatnike knjižnice
Slični predmeti
REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
od: Foord, J, i dr.
Izdano: (1993)
SURFACE-REACTION MECHANISMS GOVERNING THE SELECTIVE AREA GROWTH OF III-V COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
od: Davies, G, i dr.
Izdano: (1993)
REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
od: Foord, J, i dr.
Izdano: (1993)
SELECTIVE AREA GROWTH OF III-V-COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
od: Davies, G, i dr.
Izdano: (1992)
SOME COMPARISONS OF CHEMICAL BEAM EPITAXY WITH GAS SOURCE MOLECULAR-BEAM EPITAXY
od: Davies, G, i dr.
Izdano: (1991)