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SELECTIVE-AREA GROWTH OF III-V...
Čujuhandieđut
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Doalvun: RefWorks
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Doalvun: EndNote
Bissovaš liŋka
SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS
Bibliográfalaš dieđut
Váldodahkkit:
Davies, G
,
Skevington, P
,
Foord, J
,
French, C
,
Levoguer, C
Materiálatiipa:
Conference item
Almmustuhtton:
1994
Oažžasuvvandieđut
Govvádus
Geahča maid
Bargiidšearbma
Geahča maid
REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
Dahkki: Foord, J, et al.
Almmustuhtton: (1993)
SURFACE-REACTION MECHANISMS GOVERNING THE SELECTIVE AREA GROWTH OF III-V COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
Dahkki: Davies, G, et al.
Almmustuhtton: (1993)
REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
Dahkki: Foord, J, et al.
Almmustuhtton: (1993)
SELECTIVE AREA GROWTH OF III-V-COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
Dahkki: Davies, G, et al.
Almmustuhtton: (1992)
SOME COMPARISONS OF CHEMICAL BEAM EPITAXY WITH GAS SOURCE MOLECULAR-BEAM EPITAXY
Dahkki: Davies, G, et al.
Almmustuhtton: (1991)