Band-gap shrinkage in n-type-doped CdO probed by photoemission spectroscopy
The influence of n-type doping CdO with In or Y has been investigated by high-resolution ultraviolet and x-ray photoemission spectroscopy. It is found that core levels and valence band features suffer a shift to high binding energy due to doping. However this shift is less than the change in the wid...
| Päätekijät: | , , , , |
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| Aineistotyyppi: | Journal article |
| Kieli: | English |
| Julkaistu: |
American Physical Society
1997
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| Aiheet: |
| Yhteenveto: | The influence of n-type doping CdO with In or Y has been investigated by high-resolution ultraviolet and x-ray photoemission spectroscopy. It is found that core levels and valence band features suffer a shift to high binding energy due to doping. However this shift is less than the change in the width of the occupied conduction band. This provides a direct measurement of band gap shrinkage as a result of doping in an oxide semiconductor. |
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