Band-gap shrinkage in n-type-doped CdO probed by photoemission spectroscopy
The influence of n-type doping CdO with In or Y has been investigated by high-resolution ultraviolet and x-ray photoemission spectroscopy. It is found that core levels and valence band features suffer a shift to high binding energy due to doping. However this shift is less than the change in the wid...
| Príomhchruthaitheoirí: | , , , , |
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| Formáid: | Journal article |
| Teanga: | English |
| Foilsithe / Cruthaithe: |
American Physical Society
1997
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| Ábhair: |
| _version_ | 1826293735967686656 |
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| author | Dou, Y Fishlock, T Egdell, R Law, D Beamson, G |
| author_facet | Dou, Y Fishlock, T Egdell, R Law, D Beamson, G |
| author_sort | Dou, Y |
| collection | OXFORD |
| description | The influence of n-type doping CdO with In or Y has been investigated by high-resolution ultraviolet and x-ray photoemission spectroscopy. It is found that core levels and valence band features suffer a shift to high binding energy due to doping. However this shift is less than the change in the width of the occupied conduction band. This provides a direct measurement of band gap shrinkage as a result of doping in an oxide semiconductor. |
| first_indexed | 2024-03-07T03:34:45Z |
| format | Journal article |
| id | oxford-uuid:bbe5f727-57e7-4c20-9234-d69319f73bcb |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T03:34:45Z |
| publishDate | 1997 |
| publisher | American Physical Society |
| record_format | dspace |
| spelling | oxford-uuid:bbe5f727-57e7-4c20-9234-d69319f73bcb2022-03-27T05:20:26ZBand-gap shrinkage in n-type-doped CdO probed by photoemission spectroscopyJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:bbe5f727-57e7-4c20-9234-d69319f73bcbInorganic chemistryChemistry & allied sciencesEnglishOxford University Research Archive - ValetAmerican Physical Society1997Dou, YFishlock, TEgdell, RLaw, DBeamson, GThe influence of n-type doping CdO with In or Y has been investigated by high-resolution ultraviolet and x-ray photoemission spectroscopy. It is found that core levels and valence band features suffer a shift to high binding energy due to doping. However this shift is less than the change in the width of the occupied conduction band. This provides a direct measurement of band gap shrinkage as a result of doping in an oxide semiconductor. |
| spellingShingle | Inorganic chemistry Chemistry & allied sciences Dou, Y Fishlock, T Egdell, R Law, D Beamson, G Band-gap shrinkage in n-type-doped CdO probed by photoemission spectroscopy |
| title | Band-gap shrinkage in n-type-doped CdO probed by photoemission spectroscopy |
| title_full | Band-gap shrinkage in n-type-doped CdO probed by photoemission spectroscopy |
| title_fullStr | Band-gap shrinkage in n-type-doped CdO probed by photoemission spectroscopy |
| title_full_unstemmed | Band-gap shrinkage in n-type-doped CdO probed by photoemission spectroscopy |
| title_short | Band-gap shrinkage in n-type-doped CdO probed by photoemission spectroscopy |
| title_sort | band gap shrinkage in n type doped cdo probed by photoemission spectroscopy |
| topic | Inorganic chemistry Chemistry & allied sciences |
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