Band-gap shrinkage in n-type-doped CdO probed by photoemission spectroscopy
The influence of n-type doping CdO with In or Y has been investigated by high-resolution ultraviolet and x-ray photoemission spectroscopy. It is found that core levels and valence band features suffer a shift to high binding energy due to doping. However this shift is less than the change in the wid...
Main Authors: | Dou, Y, Fishlock, T, Egdell, R, Law, D, Beamson, G |
---|---|
Formato: | Journal article |
Idioma: | English |
Publicado: |
American Physical Society
1997
|
Subjects: |
Títulos similares
-
Nature of band-gap states in V-doped TiO2 revealed by resonant photoemission
por: Morris, D, et al.
Publicado: (1997) -
Band-gap shrinkage in n-type-doped CdO probed by photoemission spectroscopy
por: Dou, Y, et al.
Publicado: (1997) -
n-type doping in Cd2SnO4: a study by EELS and photoemission
por: Dou, Y, et al.
Publicado: (1996) -
Photoemission and STM study of the electronic structure of Nb-doped TiO2
por: Morris, D, et al.
Publicado: (2000) -
A study of core and valence levels in β-PbO₂ by hard X-ray photoemission
por: Payne, D, et al.
Publicado: (2009)