Emission of collimated THz pulses from photo-excited semiconductors

It is shown experimentally that surface-field terahertz (THz) emitters can produce well-collimated beams of THz radiation, making them useful devices for time-domain spectroscopy applications. Simulations of the carrier-dynamics are used to explain the mechanism of THz generation in InAs and GaAs, a...

Full description

Bibliographic Details
Main Authors: Johnston, M, Dowd, A, Driver, R, Linfield, E, Davies, A, Whittaker, D
Format: Conference item
Published: 2004
Description
Summary:It is shown experimentally that surface-field terahertz (THz) emitters can produce well-collimated beams of THz radiation, making them useful devices for time-domain spectroscopy applications. Simulations of the carrier-dynamics are used to explain the mechanism of THz generation in InAs and GaAs, and it is shown that inter-valley scattering of electrons must be considered in order to fully describe THz emission from InAs.