SiNx and AlOx nanolayers in hole selective passivating contacts for high efficiency silicon solar cells
The recombination of photogenerated charge carriers at metal-semiconductor interfaces remains a major source of efficiency loss in photovoltaic cells. Here, we present SiN x and AlO x nanolayers as promising interface dielectrics to enable high efficiency hole selective passivating contacts. It is d...
| Հիմնական հեղինակներ: | , , , , , , , , , , |
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| Ձևաչափ: | Journal article |
| Լեզու: | English |
| Հրապարակվել է: |
IEEE
2022
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