SiNx and AlOx nanolayers in hole selective passivating contacts for high efficiency silicon solar cells
The recombination of photogenerated charge carriers at metal-semiconductor interfaces remains a major source of efficiency loss in photovoltaic cells. Here, we present SiN x and AlO x nanolayers as promising interface dielectrics to enable high efficiency hole selective passivating contacts. It is d...
المؤلفون الرئيسيون: | McNab, S, Niu, X, Khorani, E, Wratten, A, Morisset, A, Grant, NE, Murphy, JD, Altermatt, PP, Wright, M, Wilshaw, PR, Bonilla, RS |
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التنسيق: | Journal article |
اللغة: | English |
منشور في: |
IEEE
2022
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مواد مشابهة
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