SiNx and AlOx nanolayers in hole selective passivating contacts for high efficiency silicon solar cells
The recombination of photogenerated charge carriers at metal-semiconductor interfaces remains a major source of efficiency loss in photovoltaic cells. Here, we present SiN x and AlO x nanolayers as promising interface dielectrics to enable high efficiency hole selective passivating contacts. It is d...
Үндсэн зохиолчид: | McNab, S, Niu, X, Khorani, E, Wratten, A, Morisset, A, Grant, NE, Murphy, JD, Altermatt, PP, Wright, M, Wilshaw, PR, Bonilla, RS |
---|---|
Формат: | Journal article |
Хэл сонгох: | English |
Хэвлэсэн: |
IEEE
2022
|
Ижил төстэй зүйлс
Ижил төстэй зүйлс
-
SiNx and AlOx Nanolayers in Hole Selective Passivating Contacts for High Efficiency Silicon Solar Cells
-н: McNab, S, зэрэг
Хэвлэсэн: (2023) -
Data for "Hole-selective SiNx and AlOx tunnel nanolayers for improved polysilicon passivating contacts"
-н: McNab, S, зэрэг
Хэвлэсэн: (2024) -
Optical modeling and characterization of bifacial SiNx/AlOx dielectric layers for surface passivation and antireflection in PERC
-н: Tahira, S, зэрэг
Хэвлэсэн: (2023) -
Alternative dielectrics for hole selective passivating contacts and the influence of nanolayer built-in charge
-н: Mcnab, S, зэрэг
Хэвлэсэн: (2022) -
Optoelectronic properties of ultrathin ALD silicon nitride and its potential as a hole-selective nanolayer for high efficiency solar cells
-н: Khorani, E, зэрэг
Хэвлэсэн: (2020)