The role of vertical quantum wells in carrier trapping in v-groove quantum wire lasers
We report a theoretical investigation of carrier trapping in GaAs v-groove quantum wire structures. Our results show that trapping is fast in wires confined by AlGaAs alloy barriers where the growth process creates a Ga-rich vertical quantum well at the center of the v-groove: this acts as a highly...
Main Authors: | , , , , |
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Format: | Journal article |
Language: | English |
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1996
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author | Kiener, C Rota, L Maciel, A Freyland, J Ryan, J |
author_facet | Kiener, C Rota, L Maciel, A Freyland, J Ryan, J |
author_sort | Kiener, C |
collection | OXFORD |
description | We report a theoretical investigation of carrier trapping in GaAs v-groove quantum wire structures. Our results show that trapping is fast in wires confined by AlGaAs alloy barriers where the growth process creates a Ga-rich vertical quantum well at the center of the v-groove: this acts as a highly effective scattering channel into quantum wires states. The results indicate that with suitable growth engineering, high-efficiency quantum wire structures can be obtained. © 1996 American Institute of Physics. |
first_indexed | 2024-03-07T03:43:53Z |
format | Journal article |
id | oxford-uuid:bec8f3df-762b-4201-8ced-9c2567b85dff |
institution | University of Oxford |
language | English |
last_indexed | 2024-03-07T03:43:53Z |
publishDate | 1996 |
record_format | dspace |
spelling | oxford-uuid:bec8f3df-762b-4201-8ced-9c2567b85dff2022-03-27T05:42:37ZThe role of vertical quantum wells in carrier trapping in v-groove quantum wire lasersJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:bec8f3df-762b-4201-8ced-9c2567b85dffEnglishSymplectic Elements at Oxford1996Kiener, CRota, LMaciel, AFreyland, JRyan, JWe report a theoretical investigation of carrier trapping in GaAs v-groove quantum wire structures. Our results show that trapping is fast in wires confined by AlGaAs alloy barriers where the growth process creates a Ga-rich vertical quantum well at the center of the v-groove: this acts as a highly effective scattering channel into quantum wires states. The results indicate that with suitable growth engineering, high-efficiency quantum wire structures can be obtained. © 1996 American Institute of Physics. |
spellingShingle | Kiener, C Rota, L Maciel, A Freyland, J Ryan, J The role of vertical quantum wells in carrier trapping in v-groove quantum wire lasers |
title | The role of vertical quantum wells in carrier trapping in v-groove quantum wire lasers |
title_full | The role of vertical quantum wells in carrier trapping in v-groove quantum wire lasers |
title_fullStr | The role of vertical quantum wells in carrier trapping in v-groove quantum wire lasers |
title_full_unstemmed | The role of vertical quantum wells in carrier trapping in v-groove quantum wire lasers |
title_short | The role of vertical quantum wells in carrier trapping in v-groove quantum wire lasers |
title_sort | role of vertical quantum wells in carrier trapping in v groove quantum wire lasers |
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