The production and annealing stages of the self-interstitial (R2) defect in diamond

We report on the production rate of the neutral (0 0 1)-split self-interstitial (measured via the electron paramagnetic resonance (EPR) concentration of the R2 defect) in type IIa diamond irradiated at a controlled and measured sample temperature in the interval 110-350 K with 2 MeV electrons and a...

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Main Authors: Twitchen, D, Hunt, D, Wade, C, Newton, M, Baker, M, Anthony, T, Banholzer, W
Format: Conference item
Published: 1999
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author Twitchen, D
Hunt, D
Wade, C
Newton, M
Baker, M
Anthony, T
Banholzer, W
author_facet Twitchen, D
Hunt, D
Wade, C
Newton, M
Baker, M
Anthony, T
Banholzer, W
author_sort Twitchen, D
collection OXFORD
description We report on the production rate of the neutral (0 0 1)-split self-interstitial (measured via the electron paramagnetic resonance (EPR) concentration of the R2 defect) in type IIa diamond irradiated at a controlled and measured sample temperature in the interval 110-350 K with 2 MeV electrons and a beam flux of 7.5 x 10(13) electrons cm(-2) s(-1). On annealing at similar to 700 K, we find that the neutral (0 0 1)-split self-interstitial (R2) defect is mobile and anneals out with an associated energy of 1.6(2) eV and some loss of neutral vacancies. A significantly reduced production rate of R2 in the temperature interval 110-350 K is suggestive of a radiation enhanced annealing process. (C) 1999 Elsevier Science B.V. All rights reserved.
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spelling oxford-uuid:bf2e9458-4dfa-4435-9106-ff2f69e6f91a2022-03-27T05:45:35ZThe production and annealing stages of the self-interstitial (R2) defect in diamondConference itemhttp://purl.org/coar/resource_type/c_5794uuid:bf2e9458-4dfa-4435-9106-ff2f69e6f91aSymplectic Elements at Oxford1999Twitchen, DHunt, DWade, CNewton, MBaker, MAnthony, TBanholzer, WWe report on the production rate of the neutral (0 0 1)-split self-interstitial (measured via the electron paramagnetic resonance (EPR) concentration of the R2 defect) in type IIa diamond irradiated at a controlled and measured sample temperature in the interval 110-350 K with 2 MeV electrons and a beam flux of 7.5 x 10(13) electrons cm(-2) s(-1). On annealing at similar to 700 K, we find that the neutral (0 0 1)-split self-interstitial (R2) defect is mobile and anneals out with an associated energy of 1.6(2) eV and some loss of neutral vacancies. A significantly reduced production rate of R2 in the temperature interval 110-350 K is suggestive of a radiation enhanced annealing process. (C) 1999 Elsevier Science B.V. All rights reserved.
spellingShingle Twitchen, D
Hunt, D
Wade, C
Newton, M
Baker, M
Anthony, T
Banholzer, W
The production and annealing stages of the self-interstitial (R2) defect in diamond
title The production and annealing stages of the self-interstitial (R2) defect in diamond
title_full The production and annealing stages of the self-interstitial (R2) defect in diamond
title_fullStr The production and annealing stages of the self-interstitial (R2) defect in diamond
title_full_unstemmed The production and annealing stages of the self-interstitial (R2) defect in diamond
title_short The production and annealing stages of the self-interstitial (R2) defect in diamond
title_sort production and annealing stages of the self interstitial r2 defect in diamond
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