The production and annealing stages of the self-interstitial (R2) defect in diamond
We report on the production rate of the neutral (0 0 1)-split self-interstitial (measured via the electron paramagnetic resonance (EPR) concentration of the R2 defect) in type IIa diamond irradiated at a controlled and measured sample temperature in the interval 110-350 K with 2 MeV electrons and a...
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1999
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author | Twitchen, D Hunt, D Wade, C Newton, M Baker, M Anthony, T Banholzer, W |
author_facet | Twitchen, D Hunt, D Wade, C Newton, M Baker, M Anthony, T Banholzer, W |
author_sort | Twitchen, D |
collection | OXFORD |
description | We report on the production rate of the neutral (0 0 1)-split self-interstitial (measured via the electron paramagnetic resonance (EPR) concentration of the R2 defect) in type IIa diamond irradiated at a controlled and measured sample temperature in the interval 110-350 K with 2 MeV electrons and a beam flux of 7.5 x 10(13) electrons cm(-2) s(-1). On annealing at similar to 700 K, we find that the neutral (0 0 1)-split self-interstitial (R2) defect is mobile and anneals out with an associated energy of 1.6(2) eV and some loss of neutral vacancies. A significantly reduced production rate of R2 in the temperature interval 110-350 K is suggestive of a radiation enhanced annealing process. (C) 1999 Elsevier Science B.V. All rights reserved. |
first_indexed | 2024-03-07T03:45:03Z |
format | Conference item |
id | oxford-uuid:bf2e9458-4dfa-4435-9106-ff2f69e6f91a |
institution | University of Oxford |
last_indexed | 2024-03-07T03:45:03Z |
publishDate | 1999 |
record_format | dspace |
spelling | oxford-uuid:bf2e9458-4dfa-4435-9106-ff2f69e6f91a2022-03-27T05:45:35ZThe production and annealing stages of the self-interstitial (R2) defect in diamondConference itemhttp://purl.org/coar/resource_type/c_5794uuid:bf2e9458-4dfa-4435-9106-ff2f69e6f91aSymplectic Elements at Oxford1999Twitchen, DHunt, DWade, CNewton, MBaker, MAnthony, TBanholzer, WWe report on the production rate of the neutral (0 0 1)-split self-interstitial (measured via the electron paramagnetic resonance (EPR) concentration of the R2 defect) in type IIa diamond irradiated at a controlled and measured sample temperature in the interval 110-350 K with 2 MeV electrons and a beam flux of 7.5 x 10(13) electrons cm(-2) s(-1). On annealing at similar to 700 K, we find that the neutral (0 0 1)-split self-interstitial (R2) defect is mobile and anneals out with an associated energy of 1.6(2) eV and some loss of neutral vacancies. A significantly reduced production rate of R2 in the temperature interval 110-350 K is suggestive of a radiation enhanced annealing process. (C) 1999 Elsevier Science B.V. All rights reserved. |
spellingShingle | Twitchen, D Hunt, D Wade, C Newton, M Baker, M Anthony, T Banholzer, W The production and annealing stages of the self-interstitial (R2) defect in diamond |
title | The production and annealing stages of the self-interstitial (R2) defect in diamond |
title_full | The production and annealing stages of the self-interstitial (R2) defect in diamond |
title_fullStr | The production and annealing stages of the self-interstitial (R2) defect in diamond |
title_full_unstemmed | The production and annealing stages of the self-interstitial (R2) defect in diamond |
title_short | The production and annealing stages of the self-interstitial (R2) defect in diamond |
title_sort | production and annealing stages of the self interstitial r2 defect in diamond |
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