Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD
The sidewall facets of GaAs nanowires (NWs) were studied. It has been found that the sidewalls of GaAs NWs grown at 450 °C are {112} facets. However, the sidewalls of GaAs NWs start to become {110} during the postannealing at 650 °C for 30 min. © 2010 IEEE.
| Main Authors: | , , , , , |
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| Format: | Conference item |
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2010
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