APA (7 ম সংস্করণ) উদ্ধৃতি

Glasko, J., Elliman, R., Zou, J., Cockayne, D., & Gerald, F. (1998). Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature.

শিকাগো স্টাইল (17 তম সংস্করণ) উদ্ধৃতি

Glasko, J., R. Elliman, J. Zou, D. Cockayne, এবং F. Gerald. Strain and Defect Microstructure in Ion-irradiated GeSi/Si Strained Layers as a Function of Annealing Temperature. 1998.

M.L.A (9 ম সংস্করণ) উদ্ধৃতি

Glasko, J., et al. Strain and Defect Microstructure in Ion-irradiated GeSi/Si Strained Layers as a Function of Annealing Temperature. 1998.