Glasko, J., Elliman, R., Zou, J., Cockayne, D., & Gerald, F. (1998). Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature.
Cita Chicago (17th ed.)Glasko, J., R. Elliman, J. Zou, D. Cockayne, i F. Gerald. Strain and Defect Microstructure in Ion-irradiated GeSi/Si Strained Layers as a Function of Annealing Temperature. 1998.
Cita MLA (9th ed.)Glasko, J., et al. Strain and Defect Microstructure in Ion-irradiated GeSi/Si Strained Layers as a Function of Annealing Temperature. 1998.
Atenció: Aquestes cites poden no estar 100% correctes.