Glasko, J., Elliman, R., Zou, J., Cockayne, D., & Gerald, F. (1998). Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature.
Citace podle Chicago (17th ed.)Glasko, J., R. Elliman, J. Zou, D. Cockayne, a F. Gerald. Strain and Defect Microstructure in Ion-irradiated GeSi/Si Strained Layers as a Function of Annealing Temperature. 1998.
Citace podle MLA (9th ed.)Glasko, J., et al. Strain and Defect Microstructure in Ion-irradiated GeSi/Si Strained Layers as a Function of Annealing Temperature. 1998.
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