Cita APA

Glasko, J., Elliman, R., Zou, J., Cockayne, D., & Gerald, F. (1998). Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature.

Citación estilo Chicago

Glasko, J., R. Elliman, J. Zou, D. Cockayne, and F. Gerald. Strain and Defect Microstructure in Ion-irradiated GeSi/Si Strained Layers as a Function of Annealing Temperature. 1998.

Cita MLA

Glasko, J., et al. Strain and Defect Microstructure in Ion-irradiated GeSi/Si Strained Layers as a Function of Annealing Temperature. 1998.