Glasko, J., Elliman, R., Zou, J., Cockayne, D., & Gerald, F. (1998). Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature.
शिकागो शैली (17वां संस्करण) प्रशस्ति पत्रGlasko, J., R. Elliman, J. Zou, D. Cockayne, और F. Gerald. Strain and Defect Microstructure in Ion-irradiated GeSi/Si Strained Layers as a Function of Annealing Temperature. 1998.
एमएलए (9वां संस्करण) प्रशस्ति पत्रGlasko, J., et al. Strain and Defect Microstructure in Ion-irradiated GeSi/Si Strained Layers as a Function of Annealing Temperature. 1998.
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