Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature

Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature

Dades bibliogràfiques
Autors principals:	Glasko, J, Elliman, R, Zou, J, Cockayne, D, Gerald, F
Format:	Journal article
Publicat:	1998

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