Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature
Үндсэн зохиолчид: | Glasko, J, Elliman, R, Zou, J, Cockayne, D, Gerald, F |
---|---|
Формат: | Journal article |
Хэвлэсэн: |
1998
|
Ижил төстэй зүйлс
Ижил төстэй зүйлс
-
Ion irradiation of GeSi Si strained-layer heterostructures
-н: Glasko, J, зэрэг
Хэвлэсэн: (1999) -
The effect of irradiation temperature on post-irradiation strain levels in GexSi1-x/Si strained layer heterostructures
-н: Glasko, J, зэрэг
Хэвлэсэн: (1996) -
The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructures
-н: Glasko, J, зэрэг
Хэвлэсэн: (1997) -
GeSi strained layers and their applications /
-н: Stoneham, A. M., зэрэг
Хэвлэсэн: (1995) -
Ge and GeSi electroabsorption modulator arrays via strain and composition engineering
-н: Ma, Danhao.
Хэвлэсэн: (2021)