Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature

Eitemau Tebyg

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  Cyhoeddwyd: (1999)
• The effect of irradiation temperature on post-irradiation strain levels in GexSi1-x/Si strained layer heterostructures
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  Cyhoeddwyd: (1996)
• The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructures
  gan: Glasko, J, et al.
  Cyhoeddwyd: (1997)
• GeSi strained layers and their applications /
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  Cyhoeddwyd: (1995)
• Ge and GeSi electroabsorption modulator arrays via strain and composition engineering
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  Cyhoeddwyd: (2021)