Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature

Liknande verk

• Ion irradiation of GeSi Si strained-layer heterostructures
  av: Glasko, J, et al.
  Publicerad: (1999)
• The effect of irradiation temperature on post-irradiation strain levels in GexSi1-x/Si strained layer heterostructures
  av: Glasko, J, et al.
  Publicerad: (1996)
• The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructures
  av: Glasko, J, et al.
  Publicerad: (1997)
• GeSi strained layers and their applications /
  av: Stoneham, A. M., et al.
  Publicerad: (1995)
• Ge and GeSi electroabsorption modulator arrays via strain and composition engineering
  av: Ma, Danhao.
  Publicerad: (2021)