GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS

Selected results from a TEM study of copper precipitation at extended surface defects in silicon are reported. The relative getting effectiveness of surface pits, oxidation induced stacking faults, and their bounding partials is compared. Copper-silicide precipitate colonies on {111} planes are obse...

詳細記述

書誌詳細
主要な著者: Decoteau, M, Wilshaw, P, Falster, R
フォーマット: Journal article
言語:English
出版事項: Publ by Inst of Physics Publ Ltd 1991
その他の書誌記述
要約:Selected results from a TEM study of copper precipitation at extended surface defects in silicon are reported. The relative getting effectiveness of surface pits, oxidation induced stacking faults, and their bounding partials is compared. Copper-silicide precipitate colonies on {111} planes are observed for the first time and are found to nucleate at the bounding partials of oxidation induced stacking faults.