GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS

Selected results from a TEM study of copper precipitation at extended surface defects in silicon are reported. The relative getting effectiveness of surface pits, oxidation induced stacking faults, and their bounding partials is compared. Copper-silicide precipitate colonies on {111} planes are obse...

Ամբողջական նկարագրություն

Մատենագիտական մանրամասներ
Հիմնական հեղինակներ: Decoteau, M, Wilshaw, P, Falster, R
Ձևաչափ: Journal article
Լեզու:English
Հրապարակվել է: Publ by Inst of Physics Publ Ltd 1991
Նկարագրություն
Ամփոփում:Selected results from a TEM study of copper precipitation at extended surface defects in silicon are reported. The relative getting effectiveness of surface pits, oxidation induced stacking faults, and their bounding partials is compared. Copper-silicide precipitate colonies on {111} planes are observed for the first time and are found to nucleate at the bounding partials of oxidation induced stacking faults.