GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS
Selected results from a TEM study of copper precipitation at extended surface defects in silicon are reported. The relative getting effectiveness of surface pits, oxidation induced stacking faults, and their bounding partials is compared. Copper-silicide precipitate colonies on {111} planes are obse...
| Main Authors: | , , |
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| Format: | Journal article |
| Language: | English |
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Publ by Inst of Physics Publ Ltd
1991
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| _version_ | 1797092615722631168 |
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| author | Decoteau, M Wilshaw, P Falster, R |
| author_facet | Decoteau, M Wilshaw, P Falster, R |
| author_sort | Decoteau, M |
| collection | OXFORD |
| description | Selected results from a TEM study of copper precipitation at extended surface defects in silicon are reported. The relative getting effectiveness of surface pits, oxidation induced stacking faults, and their bounding partials is compared. Copper-silicide precipitate colonies on {111} planes are observed for the first time and are found to nucleate at the bounding partials of oxidation induced stacking faults. |
| first_indexed | 2024-03-07T03:48:32Z |
| format | Journal article |
| id | oxford-uuid:c063c1db-8fdb-4043-9577-f8d839dc7919 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T03:48:32Z |
| publishDate | 1991 |
| publisher | Publ by Inst of Physics Publ Ltd |
| record_format | dspace |
| spelling | oxford-uuid:c063c1db-8fdb-4043-9577-f8d839dc79192022-03-27T05:54:03ZGETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTSJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:c063c1db-8fdb-4043-9577-f8d839dc7919EnglishSymplectic Elements at OxfordPubl by Inst of Physics Publ Ltd1991Decoteau, MWilshaw, PFalster, RSelected results from a TEM study of copper precipitation at extended surface defects in silicon are reported. The relative getting effectiveness of surface pits, oxidation induced stacking faults, and their bounding partials is compared. Copper-silicide precipitate colonies on {111} planes are observed for the first time and are found to nucleate at the bounding partials of oxidation induced stacking faults. |
| spellingShingle | Decoteau, M Wilshaw, P Falster, R GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS |
| title | GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS |
| title_full | GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS |
| title_fullStr | GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS |
| title_full_unstemmed | GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS |
| title_short | GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS |
| title_sort | gettering of copper in silicon precipitation at extended surface defects |
| work_keys_str_mv | AT decoteaum getteringofcopperinsiliconprecipitationatextendedsurfacedefects AT wilshawp getteringofcopperinsiliconprecipitationatextendedsurfacedefects AT falsterr getteringofcopperinsiliconprecipitationatextendedsurfacedefects |