GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS

GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS

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Selected results from a TEM study of copper precipitation at extended surface defects in silicon are reported. The relative getting effectiveness of surface pits, oxidation induced stacking faults, and their bounding partials is compared. Copper-silicide precipitate colonies on {111} planes are obse...

Podrobná bibliografie
Hlavní autoři:	Decoteau, M, Wilshaw, P, Falster, R
Médium:	Journal article
Jazyk:	English
Vydáno:	Publ by Inst of Physics Publ Ltd 1991

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