GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS

Selected results from a TEM study of copper precipitation at extended surface defects in silicon are reported. The relative getting effectiveness of surface pits, oxidation induced stacking faults, and their bounding partials is compared. Copper-silicide precipitate colonies on {111} planes are obse...

ver descrição completa

Detalhes bibliográficos
Main Authors: Decoteau, M, Wilshaw, P, Falster, R
Formato: Journal article
Idioma:English
Publicado em: Publ by Inst of Physics Publ Ltd 1991