GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS
Selected results from a TEM study of copper precipitation at extended surface defects in silicon are reported. The relative getting effectiveness of surface pits, oxidation induced stacking faults, and their bounding partials is compared. Copper-silicide precipitate colonies on {111} planes are obse...
| Автори: | , , |
|---|---|
| Формат: | Journal article |
| Мова: | English |
| Опубліковано: |
Publ by Inst of Physics Publ Ltd
1991
|