A dissociation mechanism for the [a plus c] dislocation in GaN

A dissociation mechanism for the [a plus c] dislocation in GaN

Mixed-type [a+c] dislocations can be identified in atomic-resolution high-angle annular dark-field scanning transmission electron microscope images of GaN viewed along [0001] by use of a Burgers loop analysis and by observation of the depth-dependent displacements associated with the Eshelby twist....

Täydet tiedot

Bibliografiset tiedot
Päätekijät: Nellist, P, Hirsch, P, Rhode, S, Horton, M, Lozano, J, Yasuhara, A, Okunishi, E, Zhang, S, Sahonta, S, Kappers, M, Humphreys, C, Moram, M
Aineistotyyppi: Conference item
Julkaistu: Institute of Physics Publishing 2014
Kuvaus
Yhteenveto:Mixed-type [a+c] dislocations can be identified in atomic-resolution high-angle annular dark-field scanning transmission electron microscope images of GaN viewed along [0001] by use of a Burgers loop analysis and by observation of the depth-dependent displacements associated with the Eshelby twist. These dislocations are found to be able to dissociate resulting in a fault that lies perpendicular to the dislocation glide plane. Consideration of the bonding that occurs in such a fault allows the dissociation reaction to be proposed, and the proposed fault agrees with the experimental images when kinks are incorporated into the model. © Published under licence by IOP Publishing Ltd.

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