Electron-hole interactions and metal-insulator transitions in InAs/GaSb heterostructures

Electron-hole interactions and metal-insulator transitions in InAs/GaSb heterostructures

InAs/GaSb heterojunctions form bipolar 2-D layers due to the overlapping conduction and valence bands. Such systems have generated considerable interest recently due to the possibilities of gap formation by both excitonic and single particle interactions. The quantum Hall effect in this system shows...

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Bibliografische gegevens
Hoofdauteurs:	Nicholas, R, Takashima, K, Kardynal, B, Petchsingh, C, Mason, N, Maude, D, Portal, J, IPAP
Formaat:	Conference item
Gepubliceerd in:	2001

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