Long term stability of c-Si surface passivation using corona charged SiO2
<p>Recombination at the semiconductor surface continues to be a major limit to optoelectronic device performance, in particular for solar cells. Passivation films reduce surface recombination by a combination of chemical and electric field effect components. Dielectric films used for this purp...
| المؤلفون الرئيسيون: | , , , , |
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| التنسيق: | Journal article |
| منشور في: |
Elsevier
2017
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