MISFIT DISLOCATION MULTIPLICATION PROCESSES IN SI1-XGEX ALLOYS FOR X-LESS-THAN-0.15
The density of misfit dislocation sources in strained Si 1-xGex layers grown on Si substrates is rarely sufficient to explain the observed extent of relaxation when layer thicknesses are in excess of the metastable critical thickness. This letter describes a process whereby a small, but finite numbe...
| Main Authors: | , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
1990
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| _version_ | 1797092835941416960 |
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| author | Tuppen, C Gibbings, C Hockly, M Roberts, S |
| author_facet | Tuppen, C Gibbings, C Hockly, M Roberts, S |
| author_sort | Tuppen, C |
| collection | OXFORD |
| description | The density of misfit dislocation sources in strained Si 1-xGex layers grown on Si substrates is rarely sufficient to explain the observed extent of relaxation when layer thicknesses are in excess of the metastable critical thickness. This letter describes a process whereby a small, but finite number of misfit dislocation nucleation sources can lead to extensive strain relaxation across a complete wafer. Two novel mechanisms for misfit dislocation multiplication are presented and shown to be compatible with microscopic observations of chemically etched layers. |
| first_indexed | 2024-03-07T03:51:43Z |
| format | Journal article |
| id | oxford-uuid:c181c91c-0b34-41ed-837c-de900191f597 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T03:51:43Z |
| publishDate | 1990 |
| record_format | dspace |
| spelling | oxford-uuid:c181c91c-0b34-41ed-837c-de900191f5972022-03-27T06:01:56ZMISFIT DISLOCATION MULTIPLICATION PROCESSES IN SI1-XGEX ALLOYS FOR X-LESS-THAN-0.15Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:c181c91c-0b34-41ed-837c-de900191f597EnglishSymplectic Elements at Oxford1990Tuppen, CGibbings, CHockly, MRoberts, SThe density of misfit dislocation sources in strained Si 1-xGex layers grown on Si substrates is rarely sufficient to explain the observed extent of relaxation when layer thicknesses are in excess of the metastable critical thickness. This letter describes a process whereby a small, but finite number of misfit dislocation nucleation sources can lead to extensive strain relaxation across a complete wafer. Two novel mechanisms for misfit dislocation multiplication are presented and shown to be compatible with microscopic observations of chemically etched layers. |
| spellingShingle | Tuppen, C Gibbings, C Hockly, M Roberts, S MISFIT DISLOCATION MULTIPLICATION PROCESSES IN SI1-XGEX ALLOYS FOR X-LESS-THAN-0.15 |
| title | MISFIT DISLOCATION MULTIPLICATION PROCESSES IN SI1-XGEX ALLOYS FOR X-LESS-THAN-0.15 |
| title_full | MISFIT DISLOCATION MULTIPLICATION PROCESSES IN SI1-XGEX ALLOYS FOR X-LESS-THAN-0.15 |
| title_fullStr | MISFIT DISLOCATION MULTIPLICATION PROCESSES IN SI1-XGEX ALLOYS FOR X-LESS-THAN-0.15 |
| title_full_unstemmed | MISFIT DISLOCATION MULTIPLICATION PROCESSES IN SI1-XGEX ALLOYS FOR X-LESS-THAN-0.15 |
| title_short | MISFIT DISLOCATION MULTIPLICATION PROCESSES IN SI1-XGEX ALLOYS FOR X-LESS-THAN-0.15 |
| title_sort | misfit dislocation multiplication processes in si1 xgex alloys for x less than 0 15 |
| work_keys_str_mv | AT tuppenc misfitdislocationmultiplicationprocessesinsi1xgexalloysforxlessthan015 AT gibbingsc misfitdislocationmultiplicationprocessesinsi1xgexalloysforxlessthan015 AT hocklym misfitdislocationmultiplicationprocessesinsi1xgexalloysforxlessthan015 AT robertss misfitdislocationmultiplicationprocessesinsi1xgexalloysforxlessthan015 |