MISFIT DISLOCATION MULTIPLICATION PROCESSES IN SI1-XGEX ALLOYS FOR X-LESS-THAN-0.15
The density of misfit dislocation sources in strained Si 1-xGex layers grown on Si substrates is rarely sufficient to explain the observed extent of relaxation when layer thicknesses are in excess of the metastable critical thickness. This letter describes a process whereby a small, but finite numbe...
| Main Authors: | , , , |
|---|---|
| Format: | Journal article |
| Language: | English |
| Published: |
1990
|