MISFIT DISLOCATION MULTIPLICATION PROCESSES IN SI1-XGEX ALLOYS FOR X-LESS-THAN-0.15
The density of misfit dislocation sources in strained Si 1-xGex layers grown on Si substrates is rarely sufficient to explain the observed extent of relaxation when layer thicknesses are in excess of the metastable critical thickness. This letter describes a process whereby a small, but finite numbe...
Main Authors: | Tuppen, C, Gibbings, C, Hockly, M, Roberts, S |
---|---|
Format: | Journal article |
Language: | English |
Published: |
1990
|
Similar Items
-
LOCAL CONFIGURATIONS IN ERBA2CU3O6+X FOR 0.15-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.9
by: Varotto, M, et al.
Published: (1994) -
Misfits and dislocations of two-dimensional monolayer surfaces /
by: 322475 Dikande, Alain M., et al.
Published: (1995) -
Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing
by: Setiawan, Y., et al.
Published: (2012) -
DEPENDENCE OF THE DECOUPLING TEMPERATURE OF TL2BA2CA2CU3O10-DELTA(0-LESS-THAN-DELTA-LESS-THAN-0.15) ON APPLIED MAGNETIC-FIELD AND OXYGEN STOICHIOMETRY
by: Liu, R, et al.
Published: (1991) -
Misfit-dislocation generation by dissociated dislocations in quantum-well heterostructures.
by: Zou, J, et al.
Published: (1994)