Dynamics and gain in highly-excited InGaN MQWs

Dynamics and gain in highly-excited InGaN MQWs

Εμφάνιση άλλων εκδόσεων (1)

The Kerr gate technique is used to time-resolve the gain in an In0.02Ga0.98N/In0.16Ga0.84N multiple quantum well sample. A new way of analyzing the data in such a variable stripe length method gain experiment is used to analyze both the time-integrated and time-resolved spectra. We confirm that the...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριοι συγγραφείς:	Taylor, R, Kyhm, K, Smith, J, Rice, J, Ryan, J, Someya, T, Arakawa, Y
Μορφή:	Journal article
Γλώσσα:	English
Έκδοση:	2002

Παρόμοια τεκμήρια

Dynamics and gain in highly-excited InGaN MQWs
ανά: Taylor, R, κ.ά.
Έκδοση: (2002)

Time-resolved gain dynamics in InGaN MQWs using a Kerr gate
ανά: Taylor, R, κ.ά.
Έκδοση: (2003)

Time-resolved gain dynamics in InGaN MQWs using a Kerr gate
ανά: Taylor, R, κ.ά.
Έκδοση: (2003)

Time-resolved gain saturation dynamics in InGaN multi-quantum well structures
ανά: Kyhm, K, κ.ά.
Έκδοση: (2004)

Time-resolved gain saturation dynamics in InGaN multi-quantum well structures
ανά: Kyhm, K, κ.ά.
Έκδοση: (2004)

Time-resolved gain dynamics in InGaN MQW structures
ανά: Kyhm, K, κ.ά.
Έκδοση: (2005)

Characterization and fabrication of InGaN/GaN MQWs and LEDs on macroporous Si substrate
ανά: Dang, Dominic Thor Weng
Έκδοση: (2011)

Efficiency enhancement of InGaN amber MQWs using nanopillar structures
ανά: Ou Yiyu, κ.ά.
Έκδοση: (2018-01-01)

Saturation of gain in In0.02Ga0.98N/In0.16Ga0.84N MQW plasmas
ανά: Kyhm, K, κ.ά.
Έκδοση: (2002)

Saturation of gain in In0.02Ga0.98N/In0.16Ga0.84N MQW plasmas
ανά: Kyhm, K, κ.ά.
Έκδοση: (2002)

Analysis of gain saturation in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells
ανά: Kyhm, K, κ.ά.
Έκδοση: (2001)

Analysis of gain saturation in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells
ανά: Kyhm, K, κ.ά.
Έκδοση: (2001)

Identification of the Kirkendall effect as a mechanism responsible for thermal decomposition of the InGaN/GaN MQWs system
ανά: Roman Hrytsak, κ.ά.
Έκδοση: (2022-01-01)

Dynamics of single InGaN quantum dots
ανά: Taylor, R, κ.ά.
Έκδοση: (2004)

Dynamics of localized carriers in InGaN multi-quantum wells
ανά: Kyhm, K, κ.ά.
Έκδοση: (2006)

Mechanism of V‑Shaped Pits on Promoting Hole Injection in the InGaN MQWs: First-Principles Investigation
ανά: Qingqing Feng, κ.ά.
Έκδοση: (2024-01-01)

Time-resolved dynamics in single InGaN quantum dots
ανά: Robinson, J, κ.ά.
Έκδοση: (2003)

Biexciton and exciton dynamics in single InGaN quantum dots
ανά: Rice, J, κ.ά.
Έκδοση: (2005)

Time-resolved photoluminescence from hot two-dimensional carriers in GaAsGaAlAs MQWS
ανά: Ryan, J, κ.ά.
Έκδοση: (1986)

Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits
ανά: Hsin-Yu Liu, κ.ά.
Έκδοση: (2024-01-01)

Excitation and temperature dependence of the broad gain spectrum in GaAs/AlGaAs quantum rings
ανά: Jang, J, κ.ά.
Έκδοση: (2020)

Time-resolved dynamics in single InGaN quantum dots
ανά: Taylor, R, κ.ά.
Έκδοση: (2005)

Luminescence properties of isolated InGaN/GaN quantum dots
ανά: Martin, R, κ.ά.
Έκδοση: (2005)

Three-photon excitation of InGaN quantum dots
ανά: Villafane, V, κ.ά.
Έκδοση: (2023)

Optical Gain and Laser Characteristics of InGaN Quantum Wells on Ternary InGaN Substrates
ανά: Jing Zhang, κ.ά.
Έκδοση: (2013-01-01)

Time-integrated and time-resolved photoluminescence studies of InGaN quantum dots
ανά: Robinson, J, κ.ά.
Έκδοση: (2004)

Femtosecond exciton dynamics and the Mott transition in GaN under resonant excitation
ανά: Hess, S, κ.ά.
Έκδοση: (1999)

Femtosecond exciton dynamics and the mott transition in GaN under resonant excitation
ανά: Hess, S, κ.ά.
Έκδοση: (1999)

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes
ανά: Liwen Cheng, κ.ά.
Έκδοση: (2021-08-01)

Quantum dot emission from site-controlled InGaN/GaN micropyramid arrays
ανά: Edwards, P, κ.ά.
Έκδοση: (2004)

Gain characteristics of InGaN quantum wells with AlGaInN barriers
ανά: Hanlin Fu, κ.ά.
Έκδοση: (2019-04-01)

Non-equilibrium carrier dynamics and many body effects in highly excited GaN
ανά: Kyhm, K, κ.ά.
Έκδοση: (2011)

Carrier Dynamics in InGaN/GaN-Based Green LED under Different Excitation Sources
ανά: Jianfei Li, κ.ά.
Έκδοση: (2021-09-01)

Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal
ανά: Oliver, R, κ.ά.
Έκδοση: (2003)

Quantum dot emission from selectively-grown InGaN/GaN micropyramid arrays
ανά: Taylor, R, κ.ά.
Έκδοση: (2005)

Non-linear excitation and correlation studies of single InGaN quantum dots
ανά: Collins, D, κ.ά.
Έκδοση: (2009)

Non-linear excitation and correlation studies of single InGaN quantum dots
ανά: Collins, D, κ.ά.
Έκδοση: (2009)

Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices
ανά: James (Zi-Jian) Ju, κ.ά.
Έκδοση: (2016-04-01)

On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
ανά: Zhang, Xueliang, κ.ά.
Έκδοση: (2014)

Stimulated emission and excitonic bleaching in GaN epilayers under high-density excitation
ανά: Taylor, R, κ.ά.
Έκδοση: (1999)