Dynamics and gain in highly-excited InGaN MQWs

Dynamics and gain in highly-excited InGaN MQWs

अन्य संस्करण दिखाएं (1)

The Kerr gate technique is used to time-resolve the gain in an In0.02Ga0.98N/In0.16Ga0.84N multiple quantum well sample. A new way of analyzing the data in such a variable stripe length method gain experiment is used to analyze both the time-integrated and time-resolved spectra. We confirm that the...

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मुख्य लेखकों: Taylor, R, Kyhm, K, Smith, J, Rice, J, Ryan, J, Someya, T, Arakawa, Y
स्वरूप: Journal article
भाषा:English
प्रकाशित: 2002
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Dynamics and gain in highly-excited InGaN MQWs

Dynamics and gain in highly-excited InGaN MQWs द्वारा Taylor, R, Kyhm, K, Smith, J, Rice, J, Ryan, J, Someya, T, Arakawa, Y

प्रकाशित 2002
Conference item
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