IMAGING OF DEEP DEFECTS USING TRANSMISSION ION CHANNELING
Stacking faults close to the back surface of a thinned silicon crystal have been imaged through 50 μm of overlying material using transmission ion channeling with 3 MeV protons. These faults were deeper than those normally detectable using ion backscattering with a similar beam. Images were produced...
| Những tác giả chính: | , , , |
|---|---|
| Định dạng: | Journal article |
| Được phát hành: |
1995
|
| Tóm tắt: | Stacking faults close to the back surface of a thinned silicon crystal have been imaged through 50 μm of overlying material using transmission ion channeling with 3 MeV protons. These faults were deeper than those normally detectable using ion backscattering with a similar beam. Images were produced by mapping the mean energy loss of 3 MeV protons transmitted through the crystal with the incident beam aligned with a planar channeling direction. Channeling in {111} planes is most effective at revealing deep faults and imaging of such faults required a detector with a restricted acceptance angle to be used. © 1995. |
|---|