IMAGING OF DEEP DEFECTS USING TRANSMISSION ION CHANNELING
Stacking faults close to the back surface of a thinned silicon crystal have been imaged through 50 μm of overlying material using transmission ion channeling with 3 MeV protons. These faults were deeper than those normally detectable using ion backscattering with a similar beam. Images were produced...
| Main Authors: | , , , |
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| Format: | Journal article |
| Published: |
1995
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