Enhanced field emission from polysilicon emitters using porous silicon
It is now well known that the field emission performance of single crystal silicon field emitters is improved by the formation of porous silicon on their surface. However, single crystal based displays are likely to be expensive and difficult to scale up. Displays based on polysilicon would have adv...
| Main Authors: | , , , , , , , |
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| Format: | Conference item |
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1996
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| _version_ | 1826294988335480832 |
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| author | Pullen, SE Huang, M Huq, SE Boswell, E Prewett, P Smith, G Wilshaw, P Sci, R |
| author_facet | Pullen, SE Huang, M Huq, SE Boswell, E Prewett, P Smith, G Wilshaw, P Sci, R |
| author_sort | Pullen, SE |
| collection | OXFORD |
| description | It is now well known that the field emission performance of single crystal silicon field emitters is improved by the formation of porous silicon on their surface. However, single crystal based displays are likely to be expensive and difficult to scale up. Displays based on polysilicon would have advantages in both of these respects. We now report the first observation of enhanced field emission from porous silicon on polysilicon emitters.Both wet and dry etching processes were used to produce emitters on n and p type polysilicon. Porous silicon was then formed by anodisation. Field emission characterisation after the anodisation shows a significant starting voltage reduction of 40-50% in each of the samples tested. |
| first_indexed | 2024-03-07T03:54:11Z |
| format | Conference item |
| id | oxford-uuid:c249d259-f04f-4959-b371-9dd594043243 |
| institution | University of Oxford |
| last_indexed | 2024-03-07T03:54:11Z |
| publishDate | 1996 |
| record_format | dspace |
| spelling | oxford-uuid:c249d259-f04f-4959-b371-9dd5940432432022-03-27T06:07:57ZEnhanced field emission from polysilicon emitters using porous siliconConference itemhttp://purl.org/coar/resource_type/c_5794uuid:c249d259-f04f-4959-b371-9dd594043243Symplectic Elements at Oxford1996Pullen, SEHuang, MHuq, SEBoswell, EPrewett, PSmith, GWilshaw, PSci, RIt is now well known that the field emission performance of single crystal silicon field emitters is improved by the formation of porous silicon on their surface. However, single crystal based displays are likely to be expensive and difficult to scale up. Displays based on polysilicon would have advantages in both of these respects. We now report the first observation of enhanced field emission from porous silicon on polysilicon emitters.Both wet and dry etching processes were used to produce emitters on n and p type polysilicon. Porous silicon was then formed by anodisation. Field emission characterisation after the anodisation shows a significant starting voltage reduction of 40-50% in each of the samples tested. |
| spellingShingle | Pullen, SE Huang, M Huq, SE Boswell, E Prewett, P Smith, G Wilshaw, P Sci, R Enhanced field emission from polysilicon emitters using porous silicon |
| title | Enhanced field emission from polysilicon emitters using porous silicon |
| title_full | Enhanced field emission from polysilicon emitters using porous silicon |
| title_fullStr | Enhanced field emission from polysilicon emitters using porous silicon |
| title_full_unstemmed | Enhanced field emission from polysilicon emitters using porous silicon |
| title_short | Enhanced field emission from polysilicon emitters using porous silicon |
| title_sort | enhanced field emission from polysilicon emitters using porous silicon |
| work_keys_str_mv | AT pullense enhancedfieldemissionfrompolysiliconemittersusingporoussilicon AT huangm enhancedfieldemissionfrompolysiliconemittersusingporoussilicon AT huqse enhancedfieldemissionfrompolysiliconemittersusingporoussilicon AT boswelle enhancedfieldemissionfrompolysiliconemittersusingporoussilicon AT prewettp enhancedfieldemissionfrompolysiliconemittersusingporoussilicon AT smithg enhancedfieldemissionfrompolysiliconemittersusingporoussilicon AT wilshawp enhancedfieldemissionfrompolysiliconemittersusingporoussilicon AT scir enhancedfieldemissionfrompolysiliconemittersusingporoussilicon |