Cyclotron resonance in an asymmetric electron-hole InAs/GaSb DHET structure
The influence of the interface states on the cyclotron resonance (CR) of the broken-gap two carrier InAs/GaSb DHET system has been investigated. Enhanced coupling between electron and hole levels is observed in the samples with a monolayer of InSb formed at one of the interfaces, leading to evidence...
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| Hlavní autoři: |
Petchsingh, C,
Nicholas, R,
Poulter, A,
Hales, V,
Mason, N,
Walker, P |
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| Médium: | Journal article
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| Jazyk: | English |
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| Vydáno: |
Elsevier
2000
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