Cyclotron resonance in an asymmetric electron-hole InAs/GaSb DHET structure
The influence of the interface states on the cyclotron resonance (CR) of the broken-gap two carrier InAs/GaSb DHET system has been investigated. Enhanced coupling between electron and hole levels is observed in the samples with a monolayer of InSb formed at one of the interfaces, leading to evidence...
| Những tác giả chính: | , , , , , |
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| Định dạng: | Journal article |
| Ngôn ngữ: | English |
| Được phát hành: |
Elsevier
2000
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