SIMPLE TECHNIQUE FOR MEASURING DOPING EFFECTS ON DISLOCATION MOTION IN SILICON.
A microindentation-based technique has been developed to investigate the influence of doping on dislocation motion in semiconductors and insulators. It allows investigation of the doping effect using simple equipment and small, easily-prepared, specimens. The technique involves high temperature inde...
| Κύριοι συγγραφείς: | , , |
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| Μορφή: | Journal article |
| Γλώσσα: | English |
| Έκδοση: |
1983
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