Dynamics and gain in highly-excited InGaN MQWs

Dynamics and gain in highly-excited InGaN MQWs

Show other versions (1)

The Kerr gate technique is used to time-resolve the gain in an In0.02Ga0.98N/In0.16Ga0.84N multiple quantum well sample. A new way of analyzing the data in such a variable stripe length method gain experiment is used to analyze both the time-integrated and time-resolved spectra. We confirm that the...

Disgrifiad llawn

Manylion Llyfryddiaeth
Prif Awduron:	Taylor, R, Kyhm, K, Smith, J, Rice, J, Ryan, J, Someya, T, Arakawa, Y
Fformat:	Conference item
Cyhoeddwyd:	2002

Eitemau Tebyg

Dynamics and gain in highly-excited InGaN MQWs
gan: Taylor, R, et al.
Cyhoeddwyd: (2002)

Time-resolved gain dynamics in InGaN MQWs using a Kerr gate
gan: Taylor, R, et al.
Cyhoeddwyd: (2003)

Time-resolved gain dynamics in InGaN MQWs using a Kerr gate
gan: Taylor, R, et al.
Cyhoeddwyd: (2003)

Time-resolved gain saturation dynamics in InGaN multi-quantum well structures
gan: Kyhm, K, et al.
Cyhoeddwyd: (2004)

Time-resolved gain saturation dynamics in InGaN multi-quantum well structures
gan: Kyhm, K, et al.
Cyhoeddwyd: (2004)

Time-resolved gain dynamics in InGaN MQW structures
gan: Kyhm, K, et al.
Cyhoeddwyd: (2005)

Characterization and fabrication of InGaN/GaN MQWs and LEDs on macroporous Si substrate
gan: Dang, Dominic Thor Weng
Cyhoeddwyd: (2011)

Efficiency enhancement of InGaN amber MQWs using nanopillar structures
gan: Ou Yiyu, et al.
Cyhoeddwyd: (2018-01-01)

Saturation of gain in In0.02Ga0.98N/In0.16Ga0.84N MQW plasmas
gan: Kyhm, K, et al.
Cyhoeddwyd: (2002)

Saturation of gain in In0.02Ga0.98N/In0.16Ga0.84N MQW plasmas
gan: Kyhm, K, et al.
Cyhoeddwyd: (2002)

Analysis of gain saturation in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells
gan: Kyhm, K, et al.
Cyhoeddwyd: (2001)

Analysis of gain saturation in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells
gan: Kyhm, K, et al.
Cyhoeddwyd: (2001)

Identification of the Kirkendall effect as a mechanism responsible for thermal decomposition of the InGaN/GaN MQWs system
gan: Roman Hrytsak, et al.
Cyhoeddwyd: (2022-01-01)

Dynamics of single InGaN quantum dots
gan: Taylor, R, et al.
Cyhoeddwyd: (2004)

Dynamics of localized carriers in InGaN multi-quantum wells
gan: Kyhm, K, et al.
Cyhoeddwyd: (2006)

Mechanism of V‑Shaped Pits on Promoting Hole Injection in the InGaN MQWs: First-Principles Investigation
gan: Qingqing Feng, et al.
Cyhoeddwyd: (2024-01-01)

Time-resolved dynamics in single InGaN quantum dots
gan: Robinson, J, et al.
Cyhoeddwyd: (2003)

Biexciton and exciton dynamics in single InGaN quantum dots
gan: Rice, J, et al.
Cyhoeddwyd: (2005)

Time-resolved photoluminescence from hot two-dimensional carriers in GaAsGaAlAs MQWS
gan: Ryan, J, et al.
Cyhoeddwyd: (1986)

Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits
gan: Hsin-Yu Liu, et al.
Cyhoeddwyd: (2024-01-01)

Excitation and temperature dependence of the broad gain spectrum in GaAs/AlGaAs quantum rings
gan: Jang, J, et al.
Cyhoeddwyd: (2020)

Time-resolved dynamics in single InGaN quantum dots
gan: Taylor, R, et al.
Cyhoeddwyd: (2005)

Luminescence properties of isolated InGaN/GaN quantum dots
gan: Martin, R, et al.
Cyhoeddwyd: (2005)

Three-photon excitation of InGaN quantum dots
gan: Villafane, V, et al.
Cyhoeddwyd: (2023)

Optical Gain and Laser Characteristics of InGaN Quantum Wells on Ternary InGaN Substrates
gan: Jing Zhang, et al.
Cyhoeddwyd: (2013-01-01)

Time-integrated and time-resolved photoluminescence studies of InGaN quantum dots
gan: Robinson, J, et al.
Cyhoeddwyd: (2004)

Femtosecond exciton dynamics and the Mott transition in GaN under resonant excitation
gan: Hess, S, et al.
Cyhoeddwyd: (1999)

Femtosecond exciton dynamics and the mott transition in GaN under resonant excitation
gan: Hess, S, et al.
Cyhoeddwyd: (1999)

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes
gan: Liwen Cheng, et al.
Cyhoeddwyd: (2021-08-01)

Quantum dot emission from site-controlled InGaN/GaN micropyramid arrays
gan: Edwards, P, et al.
Cyhoeddwyd: (2004)

Gain characteristics of InGaN quantum wells with AlGaInN barriers
gan: Hanlin Fu, et al.
Cyhoeddwyd: (2019-04-01)

Non-equilibrium carrier dynamics and many body effects in highly excited GaN
gan: Kyhm, K, et al.
Cyhoeddwyd: (2011)

Carrier Dynamics in InGaN/GaN-Based Green LED under Different Excitation Sources
gan: Jianfei Li, et al.
Cyhoeddwyd: (2021-09-01)

Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal
gan: Oliver, R, et al.
Cyhoeddwyd: (2003)

Quantum dot emission from selectively-grown InGaN/GaN micropyramid arrays
gan: Taylor, R, et al.
Cyhoeddwyd: (2005)

Non-linear excitation and correlation studies of single InGaN quantum dots
gan: Collins, D, et al.
Cyhoeddwyd: (2009)

Non-linear excitation and correlation studies of single InGaN quantum dots
gan: Collins, D, et al.
Cyhoeddwyd: (2009)

Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices
gan: James (Zi-Jian) Ju, et al.
Cyhoeddwyd: (2016-04-01)

On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
gan: Zhang, Xueliang, et al.
Cyhoeddwyd: (2014)

Stimulated emission and excitonic bleaching in GaN epilayers under high-density excitation
gan: Taylor, R, et al.
Cyhoeddwyd: (1999)