High vertical yield InP nanowire growth on Si(111) using a thin buffer layer.

High vertical yield InP nanowire growth on Si(111) using a thin buffer layer.

We demonstrate the growth of InP nanowires on Si(111) using a thin InP buffer layer. The buffer layer is grown using a two-step procedure. The initial layer formation is ensured by using a very low growth temperature. An extremely high V/III ratio is necessary to prevent In droplet formation at this...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριοι συγγραφείς:	Fonseka, H, Tan, H, Wong-Leung, J, Kang, J, Parkinson, P, Jagadish, C
Μορφή:	Journal article
Γλώσσα:	English
Έκδοση:	2013

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