High vertical yield InP nanowire growth on Si(111) using a thin buffer layer.
We demonstrate the growth of InP nanowires on Si(111) using a thin InP buffer layer. The buffer layer is grown using a two-step procedure. The initial layer formation is ensured by using a very low growth temperature. An extremely high V/III ratio is necessary to prevent In droplet formation at this...
| Үндсэн зохиолчид: | , , , , , |
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| Формат: | Journal article |
| Хэл сонгох: | English |
| Хэвлэсэн: |
2013
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