EFFECTS OF DOPING ON MECHANICAL PROPERTIES OF SEMICONDUCTORS.
Dislocation velocities in semiconductors depend strongly on the concentration of electrically active impurities, at temperatures in which the intrinsic lattice resistance is rate controlling. The effect is explained in terms of deep acceptor and donor levels in the band gap associated with kinks. Do...
| Հիմնական հեղինակներ: | , , , |
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| Ձևաչափ: | Journal article |
| Լեզու: | English |
| Հրապարակվել է: |
1986
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| _version_ | 1826296031588909056 |
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| author | Hirsch, P Pirouz, P Roberts, S Warren, P |
| author_facet | Hirsch, P Pirouz, P Roberts, S Warren, P |
| author_sort | Hirsch, P |
| collection | OXFORD |
| description | Dislocation velocities in semiconductors depend strongly on the concentration of electrically active impurities, at temperatures in which the intrinsic lattice resistance is rate controlling. The effect is explained in terms of deep acceptor and donor levels in the band gap associated with kinks. Doping affects yield stress, indentation hardness and the pattern of plastic flow and cracking around indentations. New insight has been gained about the nature of the plastic zone under an indenter, and the difference in hardness of (111) and (III) faces of GaAs has been explained. |
| first_indexed | 2024-03-07T04:10:05Z |
| format | Journal article |
| id | oxford-uuid:c78927b9-a28a-4a5d-99e9-dbff309b90fa |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T04:10:05Z |
| publishDate | 1986 |
| record_format | dspace |
| spelling | oxford-uuid:c78927b9-a28a-4a5d-99e9-dbff309b90fa2022-03-27T06:45:46ZEFFECTS OF DOPING ON MECHANICAL PROPERTIES OF SEMICONDUCTORS.Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:c78927b9-a28a-4a5d-99e9-dbff309b90faEnglishSymplectic Elements at Oxford1986Hirsch, PPirouz, PRoberts, SWarren, PDislocation velocities in semiconductors depend strongly on the concentration of electrically active impurities, at temperatures in which the intrinsic lattice resistance is rate controlling. The effect is explained in terms of deep acceptor and donor levels in the band gap associated with kinks. Doping affects yield stress, indentation hardness and the pattern of plastic flow and cracking around indentations. New insight has been gained about the nature of the plastic zone under an indenter, and the difference in hardness of (111) and (III) faces of GaAs has been explained. |
| spellingShingle | Hirsch, P Pirouz, P Roberts, S Warren, P EFFECTS OF DOPING ON MECHANICAL PROPERTIES OF SEMICONDUCTORS. |
| title | EFFECTS OF DOPING ON MECHANICAL PROPERTIES OF SEMICONDUCTORS. |
| title_full | EFFECTS OF DOPING ON MECHANICAL PROPERTIES OF SEMICONDUCTORS. |
| title_fullStr | EFFECTS OF DOPING ON MECHANICAL PROPERTIES OF SEMICONDUCTORS. |
| title_full_unstemmed | EFFECTS OF DOPING ON MECHANICAL PROPERTIES OF SEMICONDUCTORS. |
| title_short | EFFECTS OF DOPING ON MECHANICAL PROPERTIES OF SEMICONDUCTORS. |
| title_sort | effects of doping on mechanical properties of semiconductors |
| work_keys_str_mv | AT hirschp effectsofdopingonmechanicalpropertiesofsemiconductors AT pirouzp effectsofdopingonmechanicalpropertiesofsemiconductors AT robertss effectsofdopingonmechanicalpropertiesofsemiconductors AT warrenp effectsofdopingonmechanicalpropertiesofsemiconductors |