EFFECTS OF DOPING ON MECHANICAL PROPERTIES OF SEMICONDUCTORS.
Dislocation velocities in semiconductors depend strongly on the concentration of electrically active impurities, at temperatures in which the intrinsic lattice resistance is rate controlling. The effect is explained in terms of deep acceptor and donor levels in the band gap associated with kinks. Do...
| Autors principals: | , , , |
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| Format: | Journal article |
| Idioma: | English |
| Publicat: |
1986
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